g c e 052-6256 rev a APT40GF120JRD 1200v 60a the fast igbt ? is a new generation of high voltage power igbts. using non- punch through technology the fast igbt? combined with an apt free- wheeling ultrafast recovery epitaxial diode (fred) offers superior ruggedness and fast switching speed. ? low forward voltage drop ? high freq. switching to 20khz ? low tail current ? ultra low leakage current ? rbsoa and scsoa rated ? ultrafast soft recovery antiparallel diode fast igbt & fred sot-227 g e e c isotop "ul recognized" preliminar y APT40GF120JRD 1200 1200 20 60 40 120 80 390 -55 to 150 300 maximum ratings (igbt) all ratings: t c = 25 c unless otherwise specified. min typ max 1200 4.5 5.5 6.5 2.9 3.4 3.5 4.1 0.8 tbd 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 0.8ma) gate threshold voltage (v ce = v ge , i c = 700 m a, t j = 25 c) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 25 c) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 125 c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25 c) 2 collector cut-off current (v ce = v ces , v ge = 0v, t j = 125 c) 2 gate-emitter leakage current (v ge = 20v, v ce = 0v) symbol bv ces v ge (th) v ce (on) i ces i ges static electrical characteristics (igbt) unit volts ma na symbol v ces v cgr v ge i c1 i c2 i cm1 i cm2 p d t j ,t stg t l parameter collector-emitter voltage collector-gate voltage (r ge = 20k w ) gate-emitter voltage continuous collector current @ t c = 25 c continuous collector current @ t c = 90 c pulsed collector current 1 @ t c = 25 c pulsed collector current 1 @ t c = 90 c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. unit volts amps watts c caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com
preliminar y symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe dynamic characteristics (igbt) APT40GF120JRD unit c/w oz gm lb?in n?m min typ max 0.32 0.66 20 1.03 29.2 10 1.1 characteristic junction to case (igbt) junction to case (fred) junction to ambient package weight mounting torque ( mounting = 8-32 or 4mm machine and terminals = 4mm machine ) symbol r q jc r q ja w t torque thermal and mechanical characteristics (igbt and fred) test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25 c) v ge = 15v v cc = 0.8v ces i c = i c2 r g = 5 w inductive switching (150 c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 5 w t j = +150 c inductive switching (25 c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 5 w t j = +25 c v ce = 20v, i c = i c2 min typ max 3500 4700 490 700 230 345 320 30 200 35 130 215 145 35 90 400 140 4.5 5.0 9.5 35 100 340 105 8.0 6 unit pf nc ns ns mj ns mj s 052-6256 rev a characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-emitter charge gate-collector ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy 4 turn-off switching energy total switching losses 4 turn-on delay time rise time turn-off delay time fall time total switching losses 4 forward transconductance 1 repetitive rating: pulse width limited by maximum junction temperature. 2 leakages include the fred and igbt. 3 see mil-std-750 method 3471 4 switching losses include the fred and igbt. apt reserves the right to change, without notice, the specifications and information contained herein.
052-6256 rev a APT40GF120JRD preliminar y characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 60 c, duty cycle = 0.5) rms forward current non-repetitive forward surge current (t j = 45 c, 8.3ms) symbol v r v rrm v rwm i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 60a maximum forward voltage i f = 120a i f = 60a, t j = 150 c static electrical characteristics (fred) unit volts amps unit volts min typ max 2.5 2.0 2.0 APT40GF120JRD 1200 60 100 540 maximum ratings (fred) all ratings: t c = 25 c unless otherwise specified. ultrafast soft recovery parallel diode min typ max 70 85 70 130 170 170 18 30 29 40 630 1820 12 12 900 600 unit ns amps nc volts a/ m s characteristic reverse recovery time, i f = 1.0a, di f /dt = -15a/ m s, v r = 30v, t j = 25 c reverse recovery time t j = 25 c i f = 60a, di f /dt = -480a/ m s, v r = 650v t j = 100 c forward recovery time t j = 25 c i f = 60a, di f /dt = 480a/ m s, v r = 650v t j = 100 c reverse recovery current t j = 25 c i f = 60a, di f /dt = -480a/ m s, v r = 650v t j = 100 c recovery charge t j = 25 c i f = 60a, di f /dt = -480a/ m s, v r = 650v t j = 100 c forward recovery voltage t j = 25 c i f = 60a, di f /dt = 480a/ m s, v r = 650v t j = 100 c rate of fall of recovery current t j = 25 c i f = 60a, di f /dt = -480a/ m s, v r =650v t j = 100 c dynamic characteristics (fred) symbol t rr1 t rr2 t rr3 t fr1 t fr2 i rrm1 i rrm2 q rr1 q rr2 v fr1 v fr2 dim/dt
preliminar y preliminar y APT40GF120JRD 052-6256 rev a sot-227 (isotop ? ) package outline pearson 411 current transformer 0.5 i rrm di f /dt adjust 30 h d.u.t. +15v -15v 0v v r 4 3 1 2 5 5 0.75 i rrm t rr / q rr waveform zero 6 1 2 3 4 6 di f /dt - current slew rate, rate of forward current change through zero crossing. i f - forward conduction current i rrm - peak reverse recovery current. t rr - reverse recovery time measured from point of i f q rr - area under the curve defined by i rrm and t rr . dim/dt - maximum rate of current change during the trailing portion of t rr. current falling through zero to a tangent line { dim/dt } extrapolated through zero defined by 0.75 and 0.50 i rrm . 6 figure 25, diode reverse recovery test circuit and waveforms figure 8, diode reverse recovery waveform and definitions q rr = 1 / 2 ( t rr . i rrm ) 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter collector gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter source terminals are shorted internally. current handling capability is equal for either source terminal.
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